To make a long story short, Gallium Nitride (GaN) is a crystalline-like material capable of conducting higher voltages. Current flows faster through components made of GaN than silicon, resulting in faster processing speeds. GaN is more efficient, and so there is less heat.
But there's a bit more to it than that. Read on to find out the full story.
Why are GaN Chargers Better Than Ordinary Chargers?
GaN components conduct electrons more efficiently than silicon and can withstand higher electric fields. This allows GaN devices to have superior power and speed, and operate at lower temperatures. Because of this, GaN is gradually replacing silicon in the construction of chargers and other electronics.
When it comes to chargers, heat is generally caused by certain components being overworked. Since GaN operates much faster and more efficiently, there is significantly less heat created compared to silicon-based devices.
Since less heat is generated, components can be brought closer together to make our chargers smaller than ever without sacrificing power or safety.
Our History with GaN
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2018 - Anker Starts Using GaN Technology
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2019 - Anker Atom PD 1 Receives the CES 2019 Innovation Award
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2021 - Anker Starts Using GaN II Technology
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What is GaN II?
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Features added circuity to increase efficiency, reduce heat, and reduce size.
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More efficient and with 2 times higher working frequency than the first generation of GaN.
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